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APT100DL60B(G) APT100DL60S(G) 600V 100A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
TO - 24
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Applications - Induction Heating * Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge
PRODUCT FEATURES
* Ultrasoft Recovery Times (trr) * Popular TO-247 Package or Surface Mount D3PAK Package * Ultra Low Forward Voltage * Low Leakage Current
PRODUCT BENEFITS
* Soft Switching - High Qrr * Low Noise Switching - Reduced Ringing * Higher Reliability Systems * Minimizes or eliminates snubber
1 2
7
D3PAK
1
2
(S)
1
2
1 - Cathode 2 - Anode Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL
All Ratings: TC = 25C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current
1
600
Volts
(TC = 124C, Duty Cycle = 0.5)
100 131 600 -55 to 175 C 300 Amps
RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 25C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C 97
Min
Typ
1.25 2.0 1.28
Max
1.6
Unit
Volts
25 250 pF
052-6318 Rev B 6 - 2009
A
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
APT100DL60B_S(G)
Min Typ
110 ns 487 IF = 100A, diF/dt = -200A/ s VR = 400V, TC = 25C 2328 11 716 IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C 5954 18 333 IF = 100A, diF/dt = -1000A/ s VR = 400V, TC = 125C 10002 49 nC Amps ns nC Amps ns nC Amps
Characteristic / Test Conditions
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RJC WT
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Min
Typ
Max
0.34
Unit
C/W oz g
0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 1 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20
Note:
lb*in N*m
PDM
0.15 0.10 0.05 0 10-5 10-4
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6318 Rev B 6 - 2009
TYPICAL PERFORMANCE CURVES
250 225 200 IF, FORWARD CURRENT (A) 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 1000 TJ= 125C TJ= 55C TJ= 25C TJ= 150C trr, COLLECTOR CURRENT (A)
APT100DL60B_S(G)
T = 125C J V = 400V
R
800 100A 50A 600 200A
400
200
0
0
200
400
600
800
1000
Qrr, REVERSE RECOVERY CHARGE (nC)
VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 14000 T = 125C 200A J 12000 10000 8000 6000 4000 2000 0 50A
V = 400V
R
-diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 IRRM, REVERSE RECOVERY CURRENT (A) 60 50 40 30 20 10 0 50A 100A
T = 125C J V = 400V
R
200A
100A
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1. 2 1.0 0.5 0.4 QRR 0.3 0.2 0 tRR
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 400 350 300 IF(AV) (A)
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
IRRM
250 200 150 100 50
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1000 CJ, JUNCTION CAPACITANCE (pF)
75 100 125 150 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
0
25
50
900 800 700 600 500
052-6318 Rev B 6 - 2009
400 300 200 100 0 1 10 100 400
VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
Vr +18V 0V D.U.T. diF /dt Adjust
APT100DL60B_S(G)
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e1 100% Sn
4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535)
3
Cathode (Heat Sink)
1.00 (.039) 1.15(.045)
Cathode
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
18.70 (.736) 19.10 (.752)
12.40 (.488) 12.70 (.500)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114)
19.81 (.780) 20.32 (.800)
1.15 (.045) 1.45 (.057)
1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.)
2.40 (.094) 2.70 (.106) (Base of Lead)
052-6318 Rev B 6 - 2009
Anode
2.21 (.087) 2.59 (.102)
Heat Sink (Cathode) and Leads are Plated
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Anode Cathode Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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